PART |
Description |
Maker |
0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
DBU-25P-K87-F0 |
Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*U
|
ITT Industries
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier 800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc MOTOROLA
|
BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor L-band radar LDMOS driver transistor From old datasheet system
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
STP3NA100 STP3NA100FP |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN 老产品:不适合用于新设计中 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
100B4R7CP500X 100B100JCA500X MW4IC001NR4 CRCW12062 |
RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
飞思卡尔半导体(中国)有限公司
|